Технічний опис 2N3019E3 Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-5AA, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW.
Інші пропозиції 2N3019E3
| Фото | Назва | Виробник | Інформація |
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2N3019E3 | Виробник : Microchip Technology |
 Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Bag |
товару немає в наявності |
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2N3019E3 | Виробник : Microchip Technology |
Description: TRANS NPN 80V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
товару немає в наявності |
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| 2N3019E3 | Виробник : Microchip Technology |
Bipolar Transistors - BJT 80V 1A 800mW Lead-Free Small-Signal BJT THT |
товару немає в наявності |