2N3250AUB/TR Microchip Technology
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A UB
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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Технічний опис 2N3250AUB/TR Microchip Technology
Description: TRANS PNP 60V 0.2A UB, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V, Current - Collector Cutoff (Max): 20nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR).
Інші пропозиції 2N3250AUB/TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| 2N3250AUB/TR | Microchip Technology |
Description: TRANS PNP 60V 0.2A UB Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Current - Collector Cutoff (Max): 20nA Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |
| 2N3250AUB/TR | Microchip Technology |
 Bipolar Transistors - BJT 60V 200mA 360mw PNP 3 Pin CER Small-Signal BJT TR |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| 2N3250AUB/TR |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A UB
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 20nA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 0.2A UB
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 20nA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2N3250AUB/TR |
|
Виробник: Microchip Technology
Bipolar Transistors - BJT 60V 200mA 360mw PNP 3 Pin CER Small-Signal BJT TR
Bipolar Transistors - BJT 60V 200mA 360mw PNP 3 Pin CER Small-Signal BJT TR
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.