Технічний опис 2N3440E3 Microchip Technology
Description: TRANS NPN 250V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 800 mW.
Інші пропозиції 2N3440E3
| Фото | Назва | Виробник | Інформація |
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2N3440E3 | Виробник : Microchip Technology |
 Trans GP BJT NPN 250V 1A 800mW 3-Pin TO-39 Bag |
товару немає в наявності |
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2N3440E3 | Виробник : Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
товару немає в наявності |
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2N3440E3 | Виробник : Microchip Technology |
Bipolar Transistors - BJT 250 V Power BJT |
товару немає в наявності |