Технічний опис 2N3501E3 Microchip Technology
Description: TRANS NPN 150V 0.3A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 500 mW.
Інші пропозиції 2N3501E3
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2N3501e3 | Виробник : Microchip Technology |
Description: TRANS NPN 150V 0.3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW |
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2N3501e3 | Виробник : Microchip Technology |
 Bipolar Transistors - BJT Small-Signal BJT |
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