Технічний опис 2N3505 TIN/LEAD Central Semiconductor
Description: 60V 600MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 400 mW.
Інші пропозиції 2N3505 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
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2N3505 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 60V 600MA 400MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
товару немає в наявності |
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2N3505 TIN/LEAD | Виробник : Central Semiconductor | Bipolar Transistors - BJT PNP Gen Pur SS |
товару немає в наявності |