Технічний опис 2N3700UB/TR Microchip Technology
Description: TRANS NPN 80V 1A UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: UB, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW.
Інші пропозиції 2N3700UB/TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
2N3700UB/TR | Microchip Technology |
 Description: TRANS NPN 80V 1A UBPackaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
 |
2N3700UB/TR | Microchip Technology |
Bipolar Transistors - BJT 80V 1A 500mW Round-End Small-Signal BJT TR |
товару немає в наявності |
В кошику од. на суму грн. |
| 2N3700UB/TR |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N3700UB/TR |
|
Виробник: Microchip Technology
Bipolar Transistors - BJT 80V 1A 500mW Round-End Small-Signal BJT TR
Bipolar Transistors - BJT 80V 1A 500mW Round-End Small-Signal BJT TR
товару немає в наявності
В кошику
од. на суму грн.