2N3704 TRE TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
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Технічний опис 2N3704 TRE TIN/LEAD Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 30 V.
Інші пропозиції 2N3704 TRE TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N3704 TRE TIN/LEAD | Виробник : Central Semiconductor | Bipolar Transistors - BJT 30V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current |
товару немає в наявності |