Технічний опис 2N3737 MOTOROLA
Description: TRANS NPN 40V 1.5A TO-46-3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: TO-46-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Інші пропозиції 2N3737
| Фото | Назва | Виробник | Інформація |
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2N3737 | Виробник : Microchip Technology |
 Description: TRANS NPN 40V 1.5A TO-46-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: TO-46-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
товару немає в наявності |
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2N3737 | Виробник : Microchip Technology |
Bipolar Transistors - BJT BJTs |
товару немає в наявності |