2N3741A Microchip Technology
Виробник: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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Технічний опис 2N3741A Microchip Technology
Description: TRANS PNP 80V 4A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W.
Інші пропозиції 2N3741A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| 2N3741A | Central Semiconductor Corp |
Description: TRANSISTORPackaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Frequency - Transition: 4MHz Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | |
|
2N3741A | Microchip Technology |
Bipolar Transistors - BJT 80V 4A 25W PNP Power BJT THT |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| 2N3741A |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 4MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 4MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N3741A |
![]() |
Виробник: Microchip Technology
Bipolar Transistors - BJT 80V 4A 25W PNP Power BJT THT
Bipolar Transistors - BJT 80V 4A 25W PNP Power BJT THT
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.



