Технічний опис 2N3741A Microchip Technology
Description: PNP TRANSISTOR, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W.
Інші пропозиції 2N3741A
| Фото | Назва | Виробник | Інформація |
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2N3741A | Виробник : Microchip Technology |
 Trans GP BJT PNP 80V 4A 25000mW 3-Pin(2+Tab) TO-66 Tray |
товар відсутній |
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2N3741A | Виробник : Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
товар відсутній |
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2N3741A | Виробник : Microchip Technology |
Bipolar Transistors - BJT Power BJT |
товар відсутній |