Технічний опис 2N3810A MOTOROLA
Description: TRANS 2PNP 50MA 60V TO78-6, Package / Case: TO-78-6 Metal Can, Packaging: Bulk, Supplier Device Package: TO-78-6, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 50mA, Power - Max: 600mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Through Hole.
Інші пропозиції 2N3810A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
2N3810A | Central Semiconductor Corp |
 Description: TRANS 2PNP 50MA 60V TO78-6Package / Case: TO-78-6 Metal Can Packaging: Bulk Supplier Device Package: TO-78-6 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Power - Max: 600mW Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2N3810A | Microchip Technology |
Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT THT |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| 2N3810A |
|
Виробник: Central Semiconductor Corp
Description: TRANS 2PNP 50MA 60V TO78-6
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Supplier Device Package: TO-78-6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 600mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Description: TRANS 2PNP 50MA 60V TO78-6
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Supplier Device Package: TO-78-6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 600mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
товару немає в наявності
В кошику
од. на суму грн.
| 2N3810A |
|
Виробник: Microchip Technology
Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT THT
Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT THT
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.