2N3838/TR Microchip Technology
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-FlatPack
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-FlatPack
Part Status: Active
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-FlatPack
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-FlatPack
Part Status: Active
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Технічний опис 2N3838/TR Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 6-FlatPack, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: 6-FlatPack, Part Status: Active.
Інші пропозиції 2N3838/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2N3838/TR | Виробник : Microchip Technology |
 Bipolar Transistors - BJT 40V 600MA Dual Small-Signal BJT TR |
товару немає в наявності |