2N3839 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 19dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: TO-72
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 19dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: TO-72
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Технічний опис 2N3839 TIN/LEAD Central Semiconductor Corp
Description: 15V 40MA 200MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 19dB, Power - Max: 300mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Frequency - Transition: 2GHz, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: TO-72.
Інші пропозиції 2N3839 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N3839 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW |
товару немає в наявності |