2N3860 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
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Технічний опис 2N3860 TIN/LEAD Central Semiconductor Corp
Description: 30V 100MA 360MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V, Frequency - Transition: 90MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V.
Інші пропозиції 2N3860 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N3860 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 30Vcbo 30Vceo 4.0Vebo 4.0pF |
товару немає в наявності |