Технічний опис 2N3879A Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A, Current - Collector Cutoff (Max): 25mA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 75 V, Power - Max: 35 W.
Інші пропозиції 2N3879A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2N3879A | Виробник : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A Current - Collector Cutoff (Max): 25mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 35 W |
товару немає в наявності |
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| 2N3879A | Виробник : Microchip Technology |
 Bipolar Transistors - BJT 75V NPN Power BJT THT |
товару немає в наявності |