2N3905 APM TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Технічний опис 2N3905 APM TIN/LEAD Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 40 V.
Інші пропозиції 2N3905 APM TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N3905 APM TIN/LEAD | Виробник : Central Semiconductor | Bipolar Transistors - BJT 40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch |
товару немає в наявності |