Технічний опис 2N3996 MOTOROLA
Description: POWER BJT, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 10 A, Supplier Device Package: TO-111, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Stud Mount, Package / Case: TO-111-4, Stud, Packaging: Bulk.
Інші пропозиції 2N3996
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N3996 | Виробник : Microchip Technology |
Description: POWER BJT Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 10 A Supplier Device Package: TO-111 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
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| 2N3996 | Виробник : Microchip Technology |
 Bipolar Transistors - BJT Power BJT |
товару немає в наявності |