Технічний опис 2N3999 MOTOROLA
Description: NPN TRANSISTOR, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Stud Mount, Package / Case: TO-210AA, TO-59-4, Stud, Packaging: Bulk, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: TO-59.
Інші пропозиції 2N3999
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N3999 | Microchip Technology |
 Description: NPN TRANSISTORDC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Packaging: Bulk Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-59 |
товару немає в наявності |
В кошику од. на суму грн. | |
| 2N3999 | Microchip Technology |
Bipolar Transistors - BJT Power BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| 2N3999 |
|
Виробник: Microchip Technology
Description: NPN TRANSISTOR
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-59
Description: NPN TRANSISTOR
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-59
товару немає в наявності
В кошику
од. на суму грн.
| 2N3999 |
|
Виробник: Microchip Technology
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
товару немає в наявності
В кошику
од. на суму грн.