Технічний опис 2N4234L MOTOROLA
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V, Supplier Device Package: TO-39 (TO-205AD), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1 W.
Інші пропозиції 2N4234L
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2N4234L | Виробник : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
товар відсутній |
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| 2N4234L | Виробник : Microchip Technology | Bipolar Transistors - BJT 40 V Long-Lead PNP Power BJT THT |
товар відсутній |