Технічний опис 2N4236L MOTOROLA
Description: POWER BJT, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Інші пропозиції 2N4236L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N4236L | Виробник : Microchip Technology |
Description: POWER BJT Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
товару немає в наявності |
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| 2N4236L | Виробник : Microchip Technology | Bipolar Transistors - BJT 80V Long-Lead PNP Power BJT THT |
товару немає в наявності |