Технічний опис 2N4401 TIN/LEAD Central Semiconductor
Description: 40V 600MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Supplier Device Package: TO-92-3, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V, Frequency - Transition: 250MHz, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Інші пропозиції 2N4401 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N4401 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 40V 600MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
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2N4401 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 6.0Vebo 600mA 625mW |
товару немає в наявності |