2N4401RA ONSEMI
Виробник: ONSEMIDescription: ONSEMI - 2N4401RA - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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Технічний опис 2N4401RA ONSEMI
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 625mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Інші пропозиції 2N4401RA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N4401RA | Виробник : Fairchild Semiconductor |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 625mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 (TO-226) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |