Технічний опис 2N4449UB Microchip Technology
Description: TRANS NPN 20V UB, Packaging: Bulk, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V, Supplier Device Package: UB, Grade: Military, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 360 mW, Qualification: MIL-PRF-19500/317.
Інші пропозиції 2N4449UB
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2N4449UB | Виробник : Microchip Technology |
 Description: TRANS NPN 20V UBPackaging: Bulk Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: UB Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
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| 2N4449UB | Виробник : Microchip Technology |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |