2N4860A Solid State Inc.
Виробник: Solid State Inc.
Description: JFET N-CH 30V TO18
Resistance - RDS(On): 40 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: TO-18
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис 2N4860A Solid State Inc.
Description: SOLID STATE - 2N4860A - JFET-Transistor, JFET, -30 V, 100 mA, -6 V, TO-18, 3 Pins, tariffCode: 85412100, Transistormontage: Durchsteckmontage, rohsCompliant: YES, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drainstrom bei Gate-Nullspannung, max.: 100mA, usEccn: EAR99, Drainstrom bei Gate-Nullspannung Idss, min.: 20mA, euEccn: NLR, Bauform - Transistor: TO-18, Anzahl der Pins: 3 Pins, Gate/Source-Durchbruchspannung, max.: -30V, Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Transistortyp: JFET, Betriebstemperatur, max.: -, Gate-Source-Sperrspannung, max.: -6V, SVHC: No SVHC (17-Jan-2023).