Технічний опис 2N5066 MOT
Description: SMALL-SIGNAL BJT, Power - Max: 400 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: TO-46, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1mA, 6V, Current - Collector Cutoff (Max): 1nA (ICBO), Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-46-3 Lens Top Metal Can, Packaging: Bulk.
Інші пропозиції 2N5066
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N5066 | Виробник : Microchip Technology |
Description: SMALL-SIGNAL BJT Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-46 DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1mA, 6V Current - Collector Cutoff (Max): 1nA (ICBO) Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-46-3 Lens Top Metal Can Packaging: Bulk |
товару немає в наявності |
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| 2N5066 | Виробник : Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |