2N5087 TRE TIN/LEAD Central Semiconductor
Виробник: Central Semiconductor
Bipolar Transistors - BJT 50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise
| Кількість | Ціна |
|---|---|
| 5+ | 72.76 грн |
| 10+ | 51.15 грн |
| 100+ | 27.70 грн |
| 500+ | 19.13 грн |
| 1000+ | 16.02 грн |
| 2000+ | 13.81 грн |
| 4000+ | 9.95 грн |
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Технічний опис 2N5087 TRE TIN/LEAD Central Semiconductor
Description: 50V 50MA 625MW TH TRANSISTOR-SMA, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V, Frequency - Transition: 40MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.5 W.
Інші пропозиції 2N5087 TRE TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N5087 TRE TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 50V 50MA 625MW TH TRANSISTOR-SMA Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.5 W |
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