Технічний опис 2N5179 TIN/LEAD Central Semiconductor
Description: 12V 50MA 200MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 15dB, Power - Max: 300mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V, Frequency - Transition: 2GHz, Noise Figure (dB Typ @ f): 4.5dB @ 200MHz, Supplier Device Package: TO-72.
Інші пропозиції 2N5179 TIN/LEAD
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2N5179 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 12V 50MA 200MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 15dB Power - Max: 300mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Supplier Device Package: TO-72 |
товару немає в наявності |
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2N5179 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 20Vcbo 12Vceo 2.5Vebo 50mA 200mW |
товару немає в наявності |