2N5190 onsemi

Виробник: onsemi
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W

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Технічний опис 2N5190 onsemi

Description: TRANS NPN 40V 4A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V, Frequency - Transition: 2MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 40 W.

Інші пропозиції 2N5190

Назва	Виробник	Інформація	Доступність
2N5190	Виробник : Central Semiconductor Corp	Description: TRANS NPN 40V 4A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 40 W	товар відсутній
2N5190	Виробник : Infineon Technologies	Bipolar Transistors - BJT	товар відсутній
2N5190	Виробник : onsemi	Bipolar Transistors - BJT BIP C77 NPN 4A 40V	товар відсутній
2N5190	Виробник : Central Semiconductor	Bipolar Transistors - BJT	товар відсутній