2N5209 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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Технічний опис 2N5209 TIN/LEAD Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Інші пропозиції 2N5209 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N5209 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 50Vceo 50Vcbo 4.5Vebo 50mA 350mW |
товару немає в наявності |