Технічний опис 2N5237S Microchip Technology
Description: TRANS NPN 120V 10A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V, Supplier Device Package: TO-39 (TO-205AD), Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1 W.
Інші пропозиції 2N5237S
| Фото | Назва | Виробник | Інформація |
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2N5237S | Виробник : Microchip Technology |
 Trans GP BJT NPN 120V 10A 1000mW 3-Pin TO-39 Bag |
товару немає в наявності |
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2N5237S | Виробник : Microchip Technology |
Description: TRANS NPN 120V 10A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
товару немає в наявності |
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| 2N5237S | Виробник : Microchip Technology | Bipolar Transistors - BJT 120 V Power BJT |
товару немає в наявності |