2N5308 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис 2N5308 TIN/LEAD Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 40 V.
Інші пропозиції 2N5308 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N5308 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 40Vcbo 40Vceo 12Vebo 300mA 625mW |
товару немає в наявності |