2N5339P Microchip Technology

Description: POWER BJT, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 5 A, Part Status: Active, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A, Operating Temperature: -55°C ~ 200°C, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.