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Технічний опис 2N5401 APM PBFREE Central Semiconductor
Description: 150V 600MA 625MW TH TRANSISTOR-S, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 1.5 W.
Інші пропозиції 2N5401 APM PBFREE
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| 2N5401 APM PBFREE | Central Semiconductor Corp |
Description: 150V 600MA 625MW TH TRANSISTOR-S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1.5 W |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |
| 2N5401 APM PBFREE | Central Semiconductor | Bipolar Transistors - BJT 150V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| 2N5401 APM PBFREE |
Виробник: Central Semiconductor Corp
Description: 150V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Description: 150V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 2N5401 APM PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT 150V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Bipolar Transistors - BJT 150V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.