2N5416 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 300V 1A 1W TH TRANSISTOR-SMALL S
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: 300V 1A 1W TH TRANSISTOR-SMALL S
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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Технічний опис 2N5416 TIN/LEAD Central Semiconductor Corp
Description: 300V 1A 1W TH TRANSISTOR-SMALL S, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Frequency - Transition: 15MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1 W.
Інші пропозиції 2N5416 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N5416 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT PNP 350Vcbo 300Vceo 6.0Vebo 1.0W |
товару немає в наявності |