Технічний опис 2N5416L MOTOROLA
Description: TRANS PNP 300V 1A TO-5, Power - Max: 750 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-5, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Інші пропозиції 2N5416L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N5416L | Виробник : Microchip Technology |
 Description: TRANS PNP 300V 1A TO-5Power - Max: 750 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
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| 2N5416L | Виробник : Microchip Technology |
Bipolar Transistors - BJT 300 V Power BJT |
товару немає в наявності |