2N5416U4 Microchip Technology


7060132284-lds-0305-2.pdf Виробник: Microchip Technology
PNP Silicon Low-Power Transistor
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Технічний опис 2N5416U4 Microchip Technology

Description: TRANS PNP 300V 1A U4, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: U4, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1 W, Grade: Military, Qualification: MIL-PRF-19500/485.

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2N5416U4 2N5416U4 Виробник : Microchip Technology Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/485
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2N5416U4 2N5416U4 Виробник : Microchip Technology LDS_0305-1633815.pdf Bipolar Transistors - BJT 300 V Power BJT
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