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2N5551,116 NXP Semiconductors

Виробник: NXP Semiconductors
Trans GP BJT NPN 160V 0.3A 630mW 3-Pin TO-92 T/R

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Технічний опис 2N5551,116 NXP Semiconductors

Description: TRANS NPN 160V 0.3A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 630 mW.

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Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	2N5551,116	Виробник : NXP USA Inc.	Description: TRANS NPN 160V 0.3A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 630 mW	товар відсутній