Технічний опис 2N5581 MOT
Description: TRANS NPN 50V 0.8A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-46 (TO-206AB), Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Інші пропозиції 2N5581
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
2N5581 | Виробник : Microchip Technology |
 Description: TRANS NPN 50V 0.8A TO46Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товар відсутній |
|
| 2N5581 | Виробник : Microchip Technology |
Bipolar Transistors - BJT Small-Signal BJT |
товар відсутній |