2N5817 PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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Технічний опис 2N5817 PBFREE Central Semiconductor Corp
Description: 40V 750MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 750 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Інші пропозиції 2N5817 PBFREE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2N5817 PBFREE | Виробник : Central Semiconductor | Bipolar Transistors - BJT Small Signal Transistor |
товару немає в наявності |