Технічний опис 2N5822 TIN/LEAD Central Semiconductor
Description: 60V 750MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 750 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W.
Інші пропозиції 2N5822 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N5822 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 60V 750MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товару немає в наявності |
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2N5822 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW |
товару немає в наявності |