2N6297 PBFREE Central Semiconductor
Виробник: Central Semiconductor
Bipolar Transistors - BJT 4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
| Кількість | Ціна |
|---|---|
| 1+ | 1295.30 грн |
| 10+ | 811.85 грн |
| 120+ | 703.86 грн |
| 510+ | 703.16 грн |
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Технічний опис 2N6297 PBFREE Central Semiconductor
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Tube, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-66, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A.
Інші пропозиції 2N6297 PBFREE
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| 2N6297 PBFREE | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Tube Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-66 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. |
| 2N6297 PBFREE |
Виробник: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.