Технічний опис 2N6297 TIN/LEAD Central Semiconductor
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW, Packaging: Tube, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Frequency - Transition: 4MHz, Supplier Device Package: TO-66, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 50 W.
Інші пропозиції 2N6297 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2N6297 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Packaging: Tube Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
товару немає в наявності |
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2N6297 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W |
товару немає в наявності |