2N6351E3 Microchip Technology
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AC, TO-33-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
Supplier Device Package: TO-33
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AC, TO-33-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
Supplier Device Package: TO-33
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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Технічний опис 2N6351E3 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-205AC, TO-33-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V, Supplier Device Package: TO-33, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 1 W.