Технічний опис 2N6352 NES
Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-213AA, TO-66-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Інші пропозиції 2N6352
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
2N6352 | Microchip Technology |
 Description: NPN TRANSISTORPackaging: Bulk Package / Case: TO-213AA, TO-66-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| 2N6352 | Microchip / Microsemi |
Darlington Transistors Power BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| 2N6352 |
|
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N6352 |
|
Виробник: Microchip / Microsemi
Darlington Transistors Power BJT
Darlington Transistors Power BJT
товару немає в наявності
В кошику
од. на суму грн.