Технічний опис 2N6517G On Semiconductor
Description: TRANS NPN 350V 0.5A TO92, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: TO-92 (TO-226), Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.
Інші пропозиції 2N6517G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
2N6517G | onsemi |
 Description: TRANS NPN 350V 0.5A TO92Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2N6517G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Case: TO92 Mounting: THT Power: 625mW |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| 2N6517G |
|
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN 350V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N6517G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power: 625mW
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power: 625mW
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.