2N6660 Microchip Technology

Description: MOSFET N-CH 60V 410MA TO39, Packaging: Bag, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 6.25W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-39, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 24 V.