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2N6661JTVP02

2N6661JTVP02 Vishay Siliconix

2N6661%282%29%2C2N6661JANTX%28V%29.pdf Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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Технічний опис 2N6661JTVP02 Vishay Siliconix

Description: MOSFET N-CH 90V 860MA TO39, Packaging: Tube, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V, Power Dissipation (Max): 725mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-39, Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 90 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Qualification: MIL-PRF-19500.