2N7002E-7-F-W Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.42 грн |
| 6000+ | 2.95 грн |
| 9000+ | 2.77 грн |
| 15000+ | 2.42 грн |
| 21000+ | 2.31 грн |
| 30000+ | 2.20 грн |
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Технічний опис 2N7002E-7-F-W Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23-3, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції 2N7002E-7-F-W за ціною від 3.73 грн до 16.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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2N7002E-7-F-W | Diodes Incorporated |
Description: MOSFET N-CH 60V 250MA SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 81000 шт: термін постачання 21-31 дні (днів) |
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| 2N7002E-7-F-W |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 250MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.42 грн |
| 31+ | 9.87 грн |
| 100+ | 6.15 грн |
| 500+ | 4.23 грн |
| 1000+ | 3.73 грн |