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2N7002EY

2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED

2N7002EY.pdf
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.72 грн
6000+1.47 грн
9000+1.37 грн
15000+1.19 грн
21000+1.13 грн
30000+1.07 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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Технічний опис 2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED

Description: N-CHANNEL SMD MOSFET ESD PROTECT, Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Інші пропозиції 2N7002EY

Фото Назва Виробник Інформація Доступність Ціна
2N7002EY 2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED 2N7002EY.pdf Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
2N7002EY 2N7002EY.pdf
2N7002EY
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.