2N7002LDBZR Texas Instruments
Виробник: Texas Instruments
Description: N-CHANNEL 5V ENHANCEMENT MODE FI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 64mA, 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 5V
Vgs (Max): 7V
Drain to Source Voltage (Vdss): 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 pC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5 pF @ 6 V
| Кількість | Ціна |
|---|---|
| 20+ | 15.61 грн |
| 31+ | 9.85 грн |
| 35+ | 8.66 грн |
| 100+ | 6.96 грн |
| 250+ | 6.39 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.67 грн |
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Технічний опис 2N7002LDBZR Texas Instruments
Description: N-CHANNEL 5V ENHANCEMENT MODE FI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 64mA, 5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 5V, Vgs (Max): 7V, Drain to Source Voltage (Vdss): 6 V, Gate Charge (Qg) (Max) @ Vgs: 34 pC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5 pF @ 6 V.
Інші пропозиції 2N7002LDBZR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N7002LDBZR | Виробник : Texas Instruments |
Description: N-CHANNEL 5V ENHANCEMENT MODE FI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 64mA, 5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 5V Vgs (Max): 7V Drain to Source Voltage (Vdss): 6 V Gate Charge (Qg) (Max) @ Vgs: 34 pC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5 pF @ 6 V |
товару немає в наявності |
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2N7002LDBZR | Виробник : Texas Instruments | MOSFETs N-channel 5V enhancement mode field effect transistors |
товару немає в наявності |