2N7334 Microsemi Corporation
Виробник: Microsemi Corporation
Description: MOSFET 4N-CH 100V 1A MO-036AB
Part Status: Active
Supplier Device Package: MO-036AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 100V
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Технічний опис 2N7334 Microsemi Corporation
Description: MOSFET 4N-CH 100V 1A MO-036AB, Part Status: Active, Supplier Device Package: MO-036AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V, Power - Max: 1.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 4 N-Channel, Mounting Type: Through Hole, Package / Case: 14-DIP (0.300", 7.62mm), Packaging: Bulk, Current - Continuous Drain (Id) @ 25°C: 1A, Drain to Source Voltage (Vdss): 100V.